Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes

III-V compound semiconductor nanostructures on silicon: Epitaxial growth, properties, and applications in light emitting diodes and lasers

Significant developments have occurred in the area of III-V compound semiconductor nanostructures. The scope of developments includes quantum dots and nanowires epitaxially grown on Si substrates, as well as their applications in light emitting diodes and lasers. Such nanoscale heterostructures exhibit remarkable structural, electrical, and optical properties. The highly effective lateral stres...

Self-assembled conjugated polymer–surfactant–silica mesostructures and their integration into light-emitting diodes{

A self-assembly process for the preparation of functional mesoscopically ordered semiconducting polymer–silica nanocomposite thin films is reported. The nanocomposites are prepared by introducing pre-synthesized semiconducting polymers into a tetrahydrofuran (THF)–water homogeneous sol solution containing silica precursor species and a surface-active agent. Depending on the concentration of the...

Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm

Thin-film Encapsulation of Organic Light-Emitting Diodes Using Single and Multilayer Structures of MgF2, YF3 and ZnS

In this research, the lifetime of green organic light emitting diodes (OLEDs) is studied using four passivation layers. To encapsulate the OLEDs, MgF2, YF3, composed of alternating MgF2/ZnS and YF3/ZnS layers were grown by thermal vacuum deposition. Measurements show that the device lifetime is significantly improved by using YF3 and ZnS as passivation layers. However, diodes encapsulated by Mg...

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) ...